smd type transistors 1.80 +0.1 -0.1 4.50 +0.1 -0.1 2.50 +0.1 -0.1 0.80 +0.1 -0.1 4.00 +0.1 -0.1 0.53 +0.1 -0.1 0.48 +0.1 -0.1 1.50 +0.1 -0.1 0.44 +0.1 -0.1 2.60 +0.1 -0.1 0.40 +0.1 -0.1 3.00 +0.1 -0.1 sot-89 unit: mm 1. base 2. collector 3. emiitter features pnp silicon planar medium. FCX589 absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v peak pulse current i c -1 a continuous collector current i cm -2 a base current i b -200 ma power dissipation p tot 1w operating and storage temperature range t j, t stg -65to+150 smd type transistors smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit breakdown voltages v (br)cbo i c =-100a -50 v breakdown voltages * v (br)ceo i c =-10ma -30 v breakdown voltages v (br)ebo i e =-100a -5 v collector-base cut-off current i cbo v cb =-30v -100 na collector -emitter cut-off current i ces v ce =-30v -100 na emitter cut-off current i ebo v eb =-4v -100 na collector-emitter saturation voltage * v ce( sat) i c =-1a, i b =-100ma i c =-2a, i b =-200ma -0.35 -0.65 v base-emitter saturation voltage * v be( sat) i c =-1a, i b =-100ma -1.2 v base-emitter turn-on voltage * v be(on ) i c =-1a, v ce =-2v -1.1 v i c =-1ma, v ce =-2v* 100 i c =-500ma, v ce =-2v* 100 300 i c =-1a, v ce =-2v* 80 i c =-2a, v ce =-2v* 40 transitional frequency f t i c =-100ma, v ce =-5v f=100mhz 100 mhz output capacitance c obo v cb =-10v, f=1mhz 15 pf * pulse test: tp = 300 s; d 0.02. h fe static forward current transfer ratio marking marking p89 smd type transistors FCX589 smd type transistors smd type transistors smd type transistors smd type transistors product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
|
